Room-temperature 4.0-μm broadened optical pumping injection cavity lasers
Identifieur interne : 002597 ( Main/Repository ); précédent : 002596; suivant : 002598Room-temperature 4.0-μm broadened optical pumping injection cavity lasers
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Abstract
The optical pumping injection cavity (OPIC) laser concept was developed to enhance the efficiency of optical pump beam absorption, and this work focuses on epitaxial configurations designed for broadband absorption around 1850 nm, an optimal pump wavelength for transmission through GaSb substrates that allows for epi-down mounting for improved heat management, while minimizing the photon decrement. The OPIC devices presented in this work have InAs/GaSb/InAs/AlSb type-II W active regions with a thicker GaSb/AlAsSb distributed Bragg reflector on top in order to enhance reflection back into the active region for epi-down mounting. Results are presented for optical pumping at 1850 nm as well as for resonant optical pumping, as the cavity resonance varies with temperature due to shifts in lattice constant, refractive index, and gain. Pumping at 1850 nm resulted in lasing from 78 K up through 310 K. At 78 K, the actual pump cavity resonance is ∼1840 nm, and with increasing temperature the resonance shifts to longer wavelengths beyond 1850 nm. Emission wavelengths range from 3.59 μm at 78 K to 4.01 μm at 310 K for 1850 nm optical pumping. The broadened OPIC configuration presents a distinct advantage over earlier reported OPIC devices as the broader resonance allows for efficient emission across a wide temperature range for a single pump wavelength (e.g., 1850 nm), providing over 400 nm of wavelength tuning. Results will be compared with a second broadened OPIC with emission wavelengths beyond 4 μm that temperature tunes across the carbon dioxide spectral line at 4.2 μm.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Room-temperature 4.0-μm broadened optical pumping injection cavity lasers</title><author><name sortKey="Olafsen, L J" uniqKey="Olafsen L">L. J. Olafsen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Baylor University, Department of Physics, One Bear Place, Box 97316</s1><s2>Waco, TX, 76798-7316</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Waco, TX, 76798-7316</wicri:noRegion></affiliation></author><author><name sortKey="Bain, L E" uniqKey="Bain L">L. E. Bain</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Baylor University, Department of Physics, One Bear Place, Box 97316</s1><s2>Waco, TX, 76798-7316</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Waco, TX, 76798-7316</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>University of North Carolina-Chapel Hill, Department of Physics and Astronomy, CB 3255, Phillips Hall Chapel Hill</s1><s2>NC 27599-3255</s2><s3>USA</s3><sZ>2 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName></affiliation></author><author><name sortKey="Bewley, W W" uniqKey="Bewley W">W. W. Bewley</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Naval Research Laboratory, 4555 Overlook Ave., SW Washington</s1><s2>DC 20375</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">District de Columbia</region></placeName></affiliation></author><author><name sortKey="Vurgaftman, I" uniqKey="Vurgaftman I">I. Vurgaftman</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Naval Research Laboratory, 4555 Overlook Ave., SW Washington</s1><s2>DC 20375</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">District de Columbia</region></placeName></affiliation></author><author><name sortKey="Meyer, J R" uniqKey="Meyer J">J. R. Meyer</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Naval Research Laboratory, 4555 Overlook Ave., SW Washington</s1><s2>DC 20375</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">District de Columbia</region></placeName></affiliation></author><author><name sortKey="Lee, H" uniqKey="Lee H">H. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Sarnoff Corporation</s1><s2>Princeton, NJ</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Sarnoff Corporation</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Applied Optoelectronics, Inc.</s1><s2>Sugar Land, TX</s2><s3>USA</s3><sZ>6 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Sugar Land, TX</wicri:noRegion></affiliation></author><author><name sortKey="Martinelli, R U" uniqKey="Martinelli R">R. U. Martinelli</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Sarnoff Corporation</s1><s2>Princeton, NJ</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Sarnoff Corporation</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0263476</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0263476 INIST</idno><idno type="RBID">Pascal:11-0263476</idno><idno type="wicri:Area/Main/Corpus">003034</idno><idno type="wicri:Area/Main/Repository">002597</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="abbreviated">Proc. SPIE Int. Soc. Opt. Eng.</title><title level="j" type="main">Proceedings of SPIE, the International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Aluminium arsenides</term><term>Ambient temperature</term><term>Binary compounds</term><term>Bragg reflection</term><term>Carbon dioxide</term><term>Indium Arsenides</term><term>Optical beam</term><term>Optical injection</term><term>Optical pumping</term><term>Refractive index</term><term>Semiconductor lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Pompage optique</term><term>Réflexion Bragg</term><term>Laser semiconducteur</term><term>Faisceau optique</term><term>Température ambiante</term><term>Indice réfraction</term><term>Composé binaire</term><term>Indium Arséniure</term><term>Antimoniure d'aluminium</term><term>Arséniure d'aluminium</term><term>Dioxyde de carbone</term><term>InAs</term><term>As In</term><term>AlSb</term><term>AlAsSb</term><term>Réflecteur Bragg</term><term>0130C</term><term>4255P</term><term>Injection optique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical pumping injection cavity (OPIC) laser concept was developed to enhance the efficiency of optical pump beam absorption, and this work focuses on epitaxial configurations designed for broadband absorption around 1850 nm, an optimal pump wavelength for transmission through GaSb substrates that allows for epi-down mounting for improved heat management, while minimizing the photon decrement. The OPIC devices presented in this work have InAs/GaSb/InAs/AlSb type-II W active regions with a thicker GaSb/AlAsSb distributed Bragg reflector on top in order to enhance reflection back into the active region for epi-down mounting. Results are presented for optical pumping at 1850 nm as well as for resonant optical pumping, as the cavity resonance varies with temperature due to shifts in lattice constant, refractive index, and gain. Pumping at 1850 nm resulted in lasing from 78 K up through 310 K. At 78 K, the actual pump cavity resonance is ∼1840 nm, and with increasing temperature the resonance shifts to longer wavelengths beyond 1850 nm. Emission wavelengths range from 3.59 μm at 78 K to 4.01 μm at 310 K for 1850 nm optical pumping. The broadened OPIC configuration presents a distinct advantage over earlier reported OPIC devices as the broader resonance allows for efficient emission across a wide temperature range for a single pump wavelength (e.g., 1850 nm), providing over 400 nm of wavelength tuning. Results will be compared with a second broadened OPIC with emission wavelengths beyond 4 μm that temperature tunes across the carbon dioxide spectral line at 4.2 μm.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA02 i1="01"><s0>PSISDG</s0></fA02><fA03 i2="1"><s0>Proc. SPIE Int. Soc. Opt. Eng.</s0></fA03><fA05><s2>7953</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Room-temperature 4.0-μm broadened optical pumping injection cavity lasers</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers X : 25-28 January 2011, San Francisco CA</s1></fA09><fA11 i1="01" i2="1"><s1>OLAFSEN (L. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>BAIN (L. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>BEWLEY (W. W.)</s1></fA11><fA11 i1="04" i2="1"><s1>VURGAFTMAN (I.)</s1></fA11><fA11 i1="05" i2="1"><s1>MEYER (J. R.)</s1></fA11><fA11 i1="06" i2="1"><s1>LEE (H.)</s1></fA11><fA11 i1="07" i2="1"><s1>MARTINELLI (R. U.)</s1></fA11><fA12 i1="01" i2="1"><s1>BELYANIN (Alexey A.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>SMOWTON (Peter M.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Baylor University, Department of Physics, One Bear Place, Box 97316</s1><s2>Waco, TX, 76798-7316</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>University of North Carolina-Chapel Hill, Department of Physics and Astronomy, CB 3255, Phillips Hall Chapel Hill</s1><s2>NC 27599-3255</s2><s3>USA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Naval Research Laboratory, 4555 Overlook Ave., SW Washington</s1><s2>DC 20375</s2><s3>USA</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Sarnoff Corporation</s1><s2>Princeton, NJ</s2><s3>USA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="05"><s1>Applied Optoelectronics, Inc.</s1><s2>Sugar Land, TX</s2><s3>USA</s3><sZ>6 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>795314.1-795314.8</s2></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA25 i1="01"><s1>SPIE</s1><s2>Bellingham WA</s2></fA25><fA26 i1="01"><s0>978-0-8194-8490-1</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000174736470260</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0263476</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical pumping injection cavity (OPIC) laser concept was developed to enhance the efficiency of optical pump beam absorption, and this work focuses on epitaxial configurations designed for broadband absorption around 1850 nm, an optimal pump wavelength for transmission through GaSb substrates that allows for epi-down mounting for improved heat management, while minimizing the photon decrement. The OPIC devices presented in this work have InAs/GaSb/InAs/AlSb type-II W active regions with a thicker GaSb/AlAsSb distributed Bragg reflector on top in order to enhance reflection back into the active region for epi-down mounting. Results are presented for optical pumping at 1850 nm as well as for resonant optical pumping, as the cavity resonance varies with temperature due to shifts in lattice constant, refractive index, and gain. Pumping at 1850 nm resulted in lasing from 78 K up through 310 K. At 78 K, the actual pump cavity resonance is ∼1840 nm, and with increasing temperature the resonance shifts to longer wavelengths beyond 1850 nm. Emission wavelengths range from 3.59 μm at 78 K to 4.01 μm at 310 K for 1850 nm optical pumping. The broadened OPIC configuration presents a distinct advantage over earlier reported OPIC devices as the broader resonance allows for efficient emission across a wide temperature range for a single pump wavelength (e.g., 1850 nm), providing over 400 nm of wavelength tuning. Results will be compared with a second broadened OPIC with emission wavelengths beyond 4 μm that temperature tunes across the carbon dioxide spectral line at 4.2 μm.</s0></fC01><fC02 i1="01" i2="3"><s0>001B00A30C</s0></fC02><fC02 i1="02" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Pompage optique</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Optical pumping</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Réflexion Bragg</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Bragg reflection</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>11</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>11</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Faisceau optique</s0><s5>37</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Optical beam</s0><s5>37</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Haz óptico</s0><s5>37</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Température ambiante</s0><s5>41</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Ambient temperature</s0><s5>41</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indice réfraction</s0><s5>42</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Refractive index</s0><s5>42</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Composé binaire</s0><s5>50</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Binary compounds</s0><s5>50</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium Arséniure</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium Arsenides</s0><s2>NC</s2><s2>NA</s2><s5>51</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Antimoniure d'aluminium</s0><s2>NK</s2><s5>61</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Aluminium antimonides</s0><s2>NK</s2><s5>61</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Arséniure d'aluminium</s0><s2>NK</s2><s5>62</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2><s5>62</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Dioxyde de carbone</s0><s2>NK</s2><s2>FX</s2><s5>63</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Carbon dioxide</s0><s2>NK</s2><s2>FX</s2><s5>63</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Carbono dióxido</s0><s2>NK</s2><s2>FX</s2><s5>63</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>AlSb</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>AlAsSb</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Réflecteur Bragg</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>0130C</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>4255P</s0><s4>INC</s4><s5>91</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Injection optique</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Optical injection</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>178</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Novel in-plane semiconductor lasers</s1><s2>10</s2><s3>San Francisco CA USA</s3><s4>2011</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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